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| MITSUBISHI TRANSISTOR MODULES QM50DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-24 * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 23 23 80 23 B2 E2 (7) 6.5 B2 E2 C1 10.5 13 10.5 34 C2E1 E2 C1 12 E1 B1 C2E1 E2 M5 Tab#110, t=0.5 E1 B1 31 LABEL (8) 22.5 6.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 50 50 400 3 500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=50A, IB=1A -IC=50A (diode forward voltage) IC=50A, VCE=5V Min. -- -- -- -- -- -- 75 -- VCC=600V, IC=50A, IB1=-IB2=1A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 3.0 3.5 1.8 -- 2.5 15 3.0 0.31 1.2 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 VCE=2.8V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) Tj=25C 80 IB=1.5A 60 IB=1.0A 40 DC CURRENT GAIN hFE Tj=25C Tj=125C VCE=5.0V IB=0.5A IB=0.3A IB=0.1A 20 0 0 1 2 3 4 5 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.6 2.0 2.4 2.8 3.2 3.6 VCE=2.8V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE(sat) IB=1A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 IC=20A IC=50A SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 tf VCC=600V IB1=-IB2=1A Tj=25C Tj=125C ton, ts, tf (s) ts 3 IC=30A 2 SWITCHING TIME 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 10 0 ton 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 ts REVERSE BIAS SAFE OPERATING AREA 160 COLLECTOR CURRENT IC (A) ts, tf (s) 140 120 100 80 60 40 20 0 0 Tj=125C SWITCHING TIME 10 1 7 5 4 3 2 tf VCC=600V 10 0 IB1=1A IC=50A 7 Tj=25C 5 Tj=125C 4 3 10 -1 2 3 4 5 7 10 0 IB2=-1A 2 3 4 5 7 10 1 200 400 600 800 1000 1200 1400 1600 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 100 DERATING FACTOR OF F. B. S. O. A. 200S COLLECTOR CURRENT IC (A) D 90 C 100S DERATING FACTOR (%) 50S 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 1 7 5 TC=25C 3 NON-REPETITIVE 2 10 0 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 0.5 0.4 1mS 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.3 Tj=25C Tj=125C 0.2 0.1 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 10 0 0.4 0.8 1.2 1.6 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 0 Tj=25C Tj=125C 10 1 400 Irr (A), Qrr (c) 10 0 200 trr 100 VCC=600V IB1=-IB2=1A 2 3 4 5 7 10 1 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 -1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 2.0 1.8 1.6 Zth (j-c) (C/ W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) 300 Irr Qrr |
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